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SMD Type
AF Power Amplifier Applications 2SB1266
TO-252
Transistors
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
Features
Suitable for sets whose heighit is restricted. High reliability.
+0.2 9.70 -0.2
+0.15 1.50 -0.15
6.50 +0.2 5.30-0.2
+0.15 -0.15
+0.1 0.80-0.1
+0.15 0.50 -0.15
0.127 max
2.3
+0.15 4.60-0.15
+0.1 0.60-0.1
+0.28 1.50 -0.1
+0.25 2.65 -0.1
+0.15 5.55 -0.15
1 Base 2 Collector 3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation TC = 25 Jumction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating -60 -60 -6 -3 -8 1.65 30 150 -55 to +150 Unit V V V A A W W
Electrical Characteristics Ta = 25
Parameter Collector cutoff current Emitter cutoff current DC current Gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-emitter voltage Collector-to-base breakdown voltage Collector-to-emitter breakdown voltage Emitter-to-base breakdown voltage Symbol ICBO IEBO hFE fT Cob Testconditons VCB = -40V , IE = 0 VEB = -4V , IC = 0 VCE = -5V , IC = -0.5A VCE = -5V , IC = -3A VCE = -5V , IC = -0.5A VCB = -10V , f = 1MHz 70 20 8 60 -0.4 -0.7 -60 -60 -6 -1 -1 MHz pF V V V V V Min Typ Max -100 -100 280 Unit iA iA
VCE(sat) IC = -2A , IB = -0.2A VBE ICE = -5V , IC = -0.5A
V(BR)CBO IC = -1mA , IE = 0 V(BR)CEO IC = -5mA , RBE = V(BR)EBO IE = -1mA , IC = 0
hFE Classification
Rank hFE Q 70 140 R 100 200 S 140 280
3.80
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